Products > Highlights > EBV & Fairchild: Most Wanted FETs

EBV & Fairchild: Most Wanted FETs

Fairchild's MOSFET Portfolio - delivering
best-in-class performance, high FOM and
pin-to-pin compatibility for ease of use

 

History of Innovation and Technology Leadership
 
Fairchild invented trench MOSFETs in the 190’s. Since then we have been perfecting MOSFET technology as a
result have a large portfolio of 1000’s of products for any application. Fairchild’s MOSFETs deliver best-in-class
performance, high FOM, and pin-to-pin compatibility for ease of use. Customers continue to choose our MOSFETs
for high quality and reliability, design support and consistent availability.

Discover Fairchild’s MOSFET Portfolio:

  • Broad Portfolio > more than 1000 different part numbers
  • Supporting voltages from 20 V to 1000 V in N and P Channel
  • RDSON levels down to 0.5 mOhm
  • Wide variety of packaging options tailored for optimal system performance,
    best thermal and minimal parasitics, providing highest power density and best EMI
  • Highest efficiency at light and heavy loads – Shielded gate technology
  • Optimized reverse recovery provides less ringing and can reduce BVds needed

Packages

  • High performance trench technology for extremely low RDSON and gate change
  • RoHS compliant
  • State-of-the-art packaging provides low thermal resistance

Learn More

Low Voltage

  • Highest efficiency at light and heavy loads – Shielded gate technology
  • Best reverse recovery performance in market. Optimized reverse recovery provides less ringing and can reduce BVds needed
  • Highest quality and widest range PQFN/MLP packages in the market
  • Versions with half bridge and build in driver for higher integration levels

Learn More

Mid Voltage

  • 34% reduction in QIT
    • Minimize ringing and eliminates snubbers
       
  • 45% reduction inImm
    • Reduce EMI
       
  • 30% reduction in RDSON
    • Improve efficiency

Learn More

High Voltage

  • Optimized for easy switching
    • 5 Ohm internal gate resistance
    • 25% lower QGD than comparable competitor device
    • 30% lower QRR than comparable competitor device
       
  • Designed for high reliability applications​
    • ​High body diode dv/dt rating

learn more