EBV & Fairchild: Most Wanted FETs

Fairchild's MOSFET Portfolio - delivering
best-in-class performance, high FOM and
pin-to-pin compatibility for ease of use

600 V Super FET® II MOSFET - “E”asy Drive Series

*_F152:Narrow Lead
Features and Benefits: 

  • Optimized for easy switching
  1. 5 Ohm internal gate resistance
  2. 25% lower QGD than comparable competitor device
  3. 30% lower QRR than comparable competitor device
    ​Designed for high reliability applications
  • ​High body diode dv/dt rating

 Packages

600 V Super FET® II MOSFET - Fast Switching Series 

 

*_F152:Narrow Lead

Features and Benefits:                                                        

  • Optimized for high speed switching
  1. ESR of less than 1 Ohm
  2. Lower gate charge than comparable competitor device
    Power88 package versions
  3. Low ringing during turn-off transient
  4. Less than half the size of D2PAK
    Designed for high reliability applications
  5. High MOSFET dv/dt rating
  6. High body diode di/dt rating

 
Packages

600 V & 650V SuperFET® II MOSFET - Fast Recovery Series

*_F155: Long Lead
*L1: Thin Lead
*L4: TO-247 4 Leads

Features and Benefits:

  • Optimized for hard switching applications
  1. Fast body diode
  2. Reduced QRR, tRR and IRR
  3. Low gate resistance for fast turn on, suitable for resonant applications
    Designed for high reliability applications
  • Excellent body diode robustness
  • High avalanche rating

 

 

Packages

650 V SuperFET® III MOSFET

SuperFET® III MOSFET is Fairchild Semiconductor’s brand new high voltage
super-junction (SJ) MOSFET family.
This advance technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dtrate.

Features and Benefits

  • Low RDSON
  • Ultra Low Gate Charge
  • Low Effective Output Capacitance
  • 100% Avalanche Tested

 
Packages

800 V Super FET® II MOSFET

*_F155: Long Lead
*L1: Thin Lead

Features and Benefits:

  • Optimized for medium - high speed switching

1. ​Improved switching performance (lower EOSS, better QG )
Designed for high reliability applications
2. Rugged body diode survives over 1000 A/us in bench tests
3. Compared to next best competitor

  • 10% better avalanche performance
  • ​4x higher rated body diode dv/dt 

Packages